Semiconductor optical amplifier




Semiconductor optical amplifiers (SOAs) are amplifiers which use a semiconductor to provide the gain medium. These amplifiers have a similar structure to Fabry–Pérot laser diodes but with anti-reflection design elements at the end faces. Recent designs include anti-reflective coatings and tilted wave guide and window regions which can reduce end face reflection to less than 0.001%. Since this creates a loss of power from the cavity which is greater than the gain, it prevents the amplifier from acting as a laser. Another type of SOA consists of two regions. One part has a structure of a Fabry-Pérot laser diode and the other has a tapered geometry in order to reduce the power density on the output facet.

Semiconductor optical amplifiers are typically made from group III-V compound semiconductors such as GaAs/AlGaAs, InP/InGaAs, InP/InGaAsP and InP/InAlGaAs, though any direct band gap semiconductors such as II-VI could conceivably be used. Such amplifiers are often used in telecommunication systems in the form of fiber-pigtailed components, operating at signal wavelengths between 850 nm and 1600 nm and generating gains of up to 30 dB.

The semiconductor optical amplifier is of small size and electrically pumped. It can be potentially less expensive than the EDFA and can be integrated with semiconductor lasers, modulators, etc. However, the performance is still not comparable with the EDFA. The SOA has higher noise, lower gain, moderate polarization dependence and high nonlinearity with fast transient time. The main advantage of SOA is that all four types of nonlinear operations (cross gain modulation, cross phase modulation, wavelength conversion and four wave mixing) can be conducted. Furthermore, SOA can be run with a low power laser. This originates from the short nanosecond or less upper state lifetime, so that the gain reacts rapidly to changes of pump or signal power and the changes of gain also cause phase changes which can distort the signals. This nonlinearity presents the most severe problem for optical communication applications. However it provides the possibility for gain in different wavelength regions from the EDFA. "Linear optical amplifiers" using gain-clamping techniques have been developed.

High optical nonlinearity makes semiconductor amplifiers attractive for all optical signal processing like all-optical switching and wavelength conversion. There has been much research on semiconductor optical amplifiers as elements for optical signal processing, wavelength conversion, clock recovery, signal demultiplexing, and pattern recognition.

Vertical-cavity SOAedit

A recent addition to the SOA family is the vertical-cavity SOA (VCSOA). These devices are similar in structure to, and share many features with, vertical-cavity surface-emitting lasers (VCSELs). The major difference when comparing VCSOAs and VCSELs is the reduced mirror reflectivity used in the amplifier cavity. With VCSOAs, reduced feedback is necessary to prevent the device from reaching lasing threshold. Due to the extremely short cavity length, and correspondingly thin gain medium, these devices exhibit very low single-pass gain (typically on the order of a few percent) and also a very large free spectral range (FSR). The small single-pass gain requires relatively high mirror reflectivity to boost the total signal gain. In addition to boosting the total signal gain, the use of the resonant cavity structure results in a very narrow gain bandwidth; coupled with the large FSR of the optical cavity, this effectively limits operation of the VCSOA to single-channel amplification. Thus, VCSOAs can be seen as amplifying filters.

Given their vertical-cavity geometry, VCSOAs are resonant cavity optical amplifiers that operate with the input/output signal entering/exiting normal to the wafer surface. In addition to their small size, the surface normal operation of VCSOAs leads to a number of advantages, including low power consumption, low noise figure, polarization insensitive gain, and the ability to fabricate high fill factor two-dimensional arrays on a single semiconductor chip. These devices are still in the early stages of research, though promising preamplifier results have been demonstrated. Further extensions to VCSOA technology are the demonstration of wavelength tunable devices. These MEMS-tunable vertical-cavity SOAs utilize a microelectromechanical systems (MEMS) based tuning mechanism for wide and continuous tuning of the peak gain wavelength of the amplifier. SOAs have a more rapid gain response, which is in the order of 1 to 100 ps.

Tapered amplifiersedit

For high output power and broader wavelength range, tapered amplifiers are used. These amplifiers consist of a lateral single-mode section and a section with a tapered structure, where the laser light is amplified. The tapered structure leads to a reduction of the power density at the output facet.

Typical parameters:

  • wavelength range: 633 to 1480 nm
  • input power: 10 to 50 mW
  • output power: up to 3 W

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